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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 19 5.4 11 Single
S
FEATURES
- 60 0.28
* * * * * * * *
Advanced Process Technology Surface Mount (IRF9Z24S/SiHF9Z24S) Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L) 175 C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
I2PAK (TO-262)
D2PAK (TO-263)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IR9Z24L/SiH9Z24L) is available for low-profile applications.
G
D S D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free D2PAK (TO-263) IRF9Z24SPbF SiHF9Z24S-E3 IRF9Z24S SiHF9Z24S D2PAK (TO-263) IRF9Z24STRLPbFa SiHF9Z24STL-E3a IRF9Z24STRLa SiHF9Z24STLa D2PAK (TO-263) IRF9Z24STRRPbFa SiHF9Z24STR-E3a IRF9Z24STRRa SiHF9Z24STRa I2PAK (TO-262) IRF9Z24LPbF SiHF9Z24L-E3 IRF9Z24L SiHF9Z24L
SnPb Note a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Currenta, e VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID IDM Energyb, e EAS IAR EAR LIMIT - 60 20 - 11 - 7.7 - 44 0.40 240 - 11 6.0 W/C mJ A mJ A UNIT V
Linear Derating Factor Single Pulse Avalanche
Repetitive Avalanche Currenta Repetitive Avalanche Energya
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Maximum Power Dissipation Peak Diode Recovery dV/dtc, e TA = 25 C TC = 25 C SYMBOL PD dV/dt TJ, Tstg for 10 s LIMIT 3.7 60 - 4.5 - 55 to + 175 300d UNIT W W V/ns C
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 C, L = 2.3 mH, RG = 25 , IAS = - 11 A (see fig. 12). c. ISD - 11 A, dI/dt 140 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Uses IRF9Z24/SiHF9Z24 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC MIN. TYP. MAX. 40 2.5 UNIT C/W
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage www.vishay.com 2 IS ISM VSD MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V, ID = - 250 A Reference to 25 C, ID = - 1 VGS = 20 V VDS = - 60 V, VGS = 0 V VDS = - 48 V, VGS = 0 V, TJ = 150 C VGS = - 10 V ID = - 6.6 Ab VDS = - 25 V, ID = - 6.6 Ac mAc VDS = VGS, ID = - 250 A
- 60 - 2.0 1.4 -
- 0.056 570 360 65 13 68 15 29
- 4.0 100 - 100 - 500 0.28 19 5.4 11 -
V V/C V nA A S
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5c ID = - 11 A, VDS = - 480 V, see fig. 6 and 13b, c
pF
VGS = - 10 V
nC
VDD = - 30 V, ID = - 11 A, RG = 18 , RD = 2.5 , see fig. 10b
ns
-
-
- 11 A - 44 - 6.3 V
G
S
TJ = 25 C, IS = - 11 A, VGS = 0 Vb
Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time trr Qrr ton TJ = 25 C, IF = -11 A, dI/dt = 100 A/sb, c 100 320 200 640 ns nC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Uses IRF9Z24/SiHF9Z24 data and test conditions.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
RD VDS VGS RG D.U.T. + - 10 V
Pulse width 1 s Duty factor 0.1 %
VDD
Fig. 10a - Switching Time Test Circuit
td(on) VGS 10 %
tr
td(off) tf
90 % VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
L Vary tp to obtain required IAS RG VDS
IAS
D.U.T. IAS
VDS + V DD VDD tp
- 10 V tp 0.01
VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k
12 V
- 10 V QGS
QG
0.2 F
0.3 F
VG
VGS
- 3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
+
D.U.T.
-
QGD
VDS
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
P.W. Period Ripple 5 %
D.U.T.
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
RG
Compliment N-Channel of D.U.T. for driver
Driver gate drive D=
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage Inductor current
Body diode forward drop
*
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91091.
Document Number: 91091 S-Pending-Rev. A, 03-Jun-08
+ + * dV/dt controlled by RG * ISD controlled by duty factor "D" * D.U.T. - device under test
+ - VDD
P.W. Period VGS = - 10 V*
VDD
ISD
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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